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Graphene heterostructures with Nitrides for high frequency Electronics

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FLAG-ERA
Flag-Era JTC 2015
Graphene heterostructures with Nitrides for high frequency Electronics
TopGaN

Full name	TopGaN
Short name
Type of organisation	Private - SME
Partner Role	Partner
Country	Poland

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Funded by the European Union under the Grant Agreement no. 101102316. Views and opinions expressed are those of the author(s) only and do not necessarily reflect those of the European Union or the European Commission. Neither the European Union nor the granting authority can be held responsible for them.

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